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Large piezoelectric strain with ultra-low strain hysteresis in highly c-axis oriented Pb(Zr0.52Ti0.48)O3 films with columnar growth on amorphous glass substrates

机译:在高度c轴取向的Pb(Zr0.52Ti0.48)O3薄膜中具有超低应变滞后的大压电应变,并且在非晶玻璃基板上呈柱状生长

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摘要

Thin films of PbZr0.52Ti0.48O3 (PZT) with largely detached columnar grains, deposited by pulsed laser deposition (PLD) on amorphous glass substrates covered with Ca2Nb3O10 nanosheets as growth template and using LaNiO3 electrode layers, are shown to exhibit very high unipolar piezoelectric strain and ultra-low strain hysteresis. The observed increase of the piezoelectric coefficient with increasing film thickness is attributed to the reduction of clamping, because of the increasingly less dense columnar microstructure (more separation between the grains) with across the film thickness. A very large piezoelectric coefficient (490 pm/V) and a high piezoelectric strain (~0.9%) are obtained in 4-μm-thick film under an applied electric field of 200 kV/cm, which is several times larger than in usual PZT ceramics. Further very low strain hysteresis (H≈2-4%) is observed in 4 to 5 μm thick films. These belong to the best values demonstrated so far in piezoelectric films. Fatigue testing shows that the piezoelectric properties are stable up to 1010 cycles. The growth of high quality PZT films with very large strain and piezoelectric coefficients, very low hysteresis and with long-term stability on a technologically important substrate as glass is of great significance for the development of practical piezo driven microelectromechanical actuator systems.
机译:通过脉冲激光沉积(PLD)在覆盖有Ca2Nb3O10纳米片作为生长模板的非晶玻璃基板上并使用LaNiO3电极层沉积的PbZr0.52Ti0.48O3(PZT)薄膜显示出非常高的单极压电性应变和超低应变磁滞。随着膜厚度的增加,压电系数的增加归因于夹持的减少,这是因为随着膜厚度的增加,致密的柱状微结构(晶粒之间的分离度越来越高)越来越少。在200 kV / cm的外加电场下,在厚度为4μm的薄膜中获得了非常大的压电系数(490 pm / V)和高压电应变(〜0.9%),这是普通PZT的几倍陶瓷。在4至5μm厚的薄膜中还观察到非常低的应变滞后(H≈2-4%)。这些属于迄今为止在压电膜中证明的最佳值。疲劳测试表明,压电性能在1010次循环后仍保持稳定。具有很高的应变和压电系数,非常低的磁滞和具有长期稳定性的高质量PZT膜在玻璃等具有重要技术意义的基板上的生长对开发实用的压电驱动微机电执行器系统具有重要意义。

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